A new idea was provided by the group-IV GeSn alloys for short-wave infrared light source compatible with CMOS due to the low cost integrated on the Si platform and can be transformed into direct bandgap alloy. More than 7. 1% Sn content or strain engineering is used to achieve the direct bandgap GeSn semiconductors and enhance the luminous efficiency of GeSn light-emitting devi... https://allfixelectricales.shop/product-category/high-voltage-tripler/