In this paper nanostructures Porous silicon layers have been prepared by electrochemical etching (ECE) technique of (111) P-type silicon wafer with a solution Electrolytic HF: ethanol at a concentration of 1:2 with various anodization currents and etching time of 20 min. The morphological. structural and optical properties of nanostructure porous silicon were investigated by Atomic Fo... https://www.elphonsolam.com/product-category/party-bag-fillers/